Hittite Microwave Company (HITT) designs and develops high-performance integrated circuits, modules and subsystems for demanding radio frequency (RF) microwave and millimeter wave applications. These applications include cellular, fiber optic and satellite communications, as well as medical and scientific imaging, industrial instrumentation, aerospace, and defense electronics. With nearly 30 years of experience and innovative practice, Hittite has a deep accumulation in the field of analog, digital and mixed-signal semiconductor technology, covering a wide range from the device level to the design and assembly of complete subsystems.

Hittite Microwave designs and develops high-performance radio frequency microwave circuit integrated circuits, modules and subsystems, microwave and millimeter wave applications. The frequency range of the product is from DC to 110 GHz. We have developed analog, digital and mixed-signal semiconductor technology and the design and assembly of complete subsystems from the equipment level. Our digital integrated circuits, radio frequency integrated circuits and monolithic microwave integrated circuit products adopt advanced equipment, the most advanced gallium arsenide (GaAs) and silicon-based semiconductor process development. These are the most advanced gallium arsenide, gallium nitride, InGaP and advanced equipment, the most advanced gallium arsenide (GaAs) and silicon-based semiconductor process development. The most advanced of these uses advanced equipment, the most advanced gallium arsenide (GaAs) and silicon-based semiconductor process development. These most advanced gallium arsenide, GaN, SOI, SiGe semiconductor, CMOS and BiCMOS semiconductor processes utilize MESFET, HEMT, pHEMT, pHEMT, HBT and PIN equipment.